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AO4456

Alpha & Omega Semiconductors
Part Number AO4456
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 1, 2008
Detailed Description AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4456 uses advanced trench technology...
Datasheet PDF File AO4456 PDF File

AO4456
AO4456

Overview
AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is www.
DataSheet4U.
com suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Standard Product AO4456 is Pb-free (meets ROHS & Sony 259 specifications).
AO4456 is a Green Product ordering option.
AO4456 and AO4456 are electrically identical.
Features VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.
6mΩ (VGS = 10V) RDS(ON) < 5.
6mΩ (VGS = 4.
5V) D S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25°C TA=70°C IDSM IDM PDSM TJ, TSTG Maximum 30 ±12 20 16 120 3.
1 2.
0 -55 to 150 Units V V A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO4456 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.
DataSheet4U.
com Conditions ID=1mA, VGS=0V VDS=24V, V GS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250 µA VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125°C VGS=4.
5V, ID=20A VDS=5V, ID=20A Min 30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance 0.
008 9 1.
4 120 3.
8 5.
9 4.
5 112 0.
37 1.
8 0.
1 20 0.
1 2.
4 4.
6 7.
4 5.
6 0.
5 5 mA µA V A mΩ mΩ S V A pF pF pF RDS(ON) gFS VSD IS IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current ...


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