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AO4801A

Alpha & Omega Semiconductors
Part Number AO4801A
Manufacturer Alpha & Omega Semiconductors
Description Dual P-Channel MOSFET
Published Jun 4, 2007
Detailed Description AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4801A uses advanced trench tec...
Datasheet PDF File AO4801A PDF File

AO4801A
AO4801A

Overview
AO4801A Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4801A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO4801A is Pb-free (meets ROHS & Sony 259 specifications) Features VDS (V) = -30V ID =-5.
6A (VGS = 10V) RDS(ON) < 42mΩ (VGS = 10V) RDS(ON) < 52mΩ (VGS = 4.
5V) RDS(ON) < 75mΩ (VGS = 2.
5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 D2 G1 S1 G2 S2 www.
DataSheet4U.
com Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Avalanche Current B B Steady State Units V -30 ±12 4.
2 3.
4 -30 11 18 TA=25°C TA=70°C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25°C 5.
6 4.
5 A Repetitive avalanche energy L=0.
3mH B Power Dissipation TA=70°C mJ 1.
1 0.
7 W °C 2.
0 1.
3 -55 to 150 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.
5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AO4801A Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250uA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-10V, ID=-5.
6A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.
5V, ID=-3.
5A VGS=-2.
5V, ID=-2.
5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-5.
6A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.
6 -25 34 48 41 60 14 -0.
74 -1 -2 933 VGS=0V, VD...


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