Part Number | SSM3J353F |
Manufacturer | Toshiba Semiconductor |
Description | Silicon P-Channel MOSFET |
Features | (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) R... |
Published | Mar 21, 2018 |
Datasheet | SSM3J353F PDF File |