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SSM3J355R

Toshiba
Part Number SSM3J355R
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Jun 22, 2019
Detailed Description MOSFETs Silicon P-Channel MOS SSM3J355R 1. Applications • Power Management Switches 2. Features (1) 1.8 V drive (2) Low ...
Datasheet PDF File SSM3J355R PDF File

SSM3J355R
SSM3J355R

Overview
MOSFETs Silicon P-Channel MOS SSM3J355R 1.
Applications • Power Management Switches 2.
Features (1) 1.
8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.
0 mΩ (typ.
) (VGS = -1.
8 V) RDS(ON) = 28.
0 mΩ (typ.
) (VGS = -2.
5 V) RDS(ON) = 23.
0 mΩ (typ.
) (VGS = -4.
5 V) 3.
Packaging and Internal Circuit SOT-23F SSM3J355R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-11 2016-11-30 Rev.
1.
0 SSM3J355R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±10 Drain current (DC) Drain current (pulsed) (Note 1) (Note 1), (Note 2...


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