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SSM3J356R

Toshiba
Part Number SSM3J356R
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published May 20, 2019
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J356R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qu...
Datasheet PDF File SSM3J356R PDF File

SSM3J356R
SSM3J356R

Overview
MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J356R 1.
Applications • Power Management Switches 2.
Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage.
(3) Low drain-source on-resistance : RDS(ON) = 400 mΩ (max) (@VGS = -4.
0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V) 3.
Packaging and Pin Assignment SSM3J356R 1: Gate 2: Source 3: Drain SOT-23F 4.
Orderable part number Orderable part number AEC-Q101 Note SSM3J356R,LF SSM3J356R,LXGF SSM3J356R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1) ©2016-2023 1 Toshiba Ele...


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