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SSM3J352F

Toshiba
Part Number SSM3J352F
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Jun 22, 2019
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J352F 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate ...
Datasheet PDF File SSM3J352F PDF File

SSM3J352F
SSM3J352F

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J352F 1.
Applications • Power Management Switches 2.
Features (1) 1.
8 V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 443 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 199 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.
5 V) RDS(ON) = 110 mΩ (max) (@VGS = -10 V) 3.
Packaging and Pin Assignment S-Mini SSM3J352F 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2016-12-19 Rev.
2.
0 SSM3J352F 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current ...


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