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SSM3J35CT

Toshiba Semiconductor
Part Number SSM3J35CT
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 19, 2014
Detailed Description SSM3J35CT TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35CT ○ High-Speed Switching Applications ○ An...
Datasheet PDF File SSM3J35CT PDF File

SSM3J35CT
SSM3J35CT

Overview
SSM3J35CT TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35CT ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.
2-V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.
2 V) : Ron = 22 Ω (max) (@VGS = -1.
5 V) : Ron = 11 Ω (max) (@VGS = -2.
5 V) : Ron = 8 Ω (max) (@VGS = -4.
0 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS -20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP -100 mA -200 Drain power dissipation PD (Note 1) 100 mW CST3 Channel temperature Tch 150 °C JEDEC - Storage temperature Tstg −55 to 150 °C Note: Using continuously under he...


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