2SD1893

2SD1890 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 2A ·Complement to Type 2SB1250 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 2 W 35 150 ℃ Tst.

2SD1890 : Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu 14.0±0.5aendc Solder Dip 4.0 lifecycle stage. For power amplification Complementary to 2SB1250 s Features q Optimum for 25W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): 2.5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol .

2SD1891 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 3A ·Low Collector Saturation Voltgae- : VCE(sat)= 3.0V(Max.)@ IC= 3A ·Complement to Type 2SB1251 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 2 W 40 150 ℃ Tst.

2SD1892 : Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 7.5±0.2 s Features q q q q 0.7±0.1 4.2±0.2 Unit: mm 14.0±0.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 120 100 5 8 5 45 2 150 –55 to +150 Unit V V V A A W 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector.

2SD1892 : Power Transistors 2SD1892 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1252 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 7.5±0.2 s Features q q q q 0.7±0.1 4.2±0.2 Unit: mm 14.0±0.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 120 100 5 8 5 45 2 150 –55 to +150 Unit V V V A A W 16.7±0.3 φ3.1±0.1 4.0 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector.

2SD1892 : ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2SB1252 APPLICATIONS ·Power amplification ·Optimum for 35W high-fidelity output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 120 100 5 5 8 45 W UNIT V V V A A SavantIC Semiconductor Produ.

2SD1892 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 4A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 4A ·Complement to Type 2SB1252 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 2 W 45 150 ℃ T.

2SD1893 : Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 110 5 10 6 50 3 150 –55 to +150 Unit V V V A A W 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector curr.

2SD1893 : ·With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1253 APPLICATIONS ·Power amplification ·Optimum for 40W high-fidelity output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 130 110 5 6 10 50 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHAR.

2SD1894 : Power Transistors 2SD1894 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1254 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 160 140 5 12 7 70 3 150 –55 to +150 Unit V V V A A W 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector curr.

2SD1894 : ·High DC Current Gain- : hFE= 5000(Min)@IC= 6A ·Low-Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@IC= 6A ·Complement to Type 2SB1254 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 12 A 70 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ .

2SD1894 : ·With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1254 APPLICATIONS ·Power amplification ·Optimum for 60W high-fidelity output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 160 140 5 7 12 70 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHAR.

2SD1895 : Power Transistors 2SD1895 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1255 Unit: mm 15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 160 140 5 15 8 100 3 150 –55 to +150 Unit V V V A A W 0.7 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector cur.

2SD1895 : ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Low-Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@IC= 7A ·Complement to Type 2SB1255 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 15 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃.

2SD1895 : ·With TO-3PFa package www.datasheet4u.com ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1255 APPLICATIONS ·Power amplification ·Optimum for 90W high-fidelity output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1895 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 160 140 5 15 8 100 W UNIT V V V A A SavantIC Semiconductor Product Specification Sili.

2SD1896 : ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Collector Power Dissipation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ is.