2SK2611

2SK2610 : www.DataSheet.co.kr 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2610 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 2.3 Ω (typ.) : |Yfs|= 4.4 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 5 15 150 595 5 15 150 −55~150 Unit V V V A W mJ A mJ °C °.

2SK2611 : This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Junction and Storage.

2SK2611 : ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·low on–resistance. ·High speed switching. ·No secondary breakdown. ·Suitable for switchingregulator, DC–DC control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A IDM Drain Current-Single Plused 27 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL .

2SK2611 : The Nell 2SK2611 is a three-terminal silicon device with current conduction capability of 9A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS, relay drive and general purpose switching applications. D G D S TO-3PB FEATURES RDS(ON) = 1.10Ω @ VGS = 10V Ultra low gate charge(58nC typical) Low reverse transfer capacitance (CRSS = 45pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT .

2SK2613 : www.DataSheet4U.com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ïYfsï = 6.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 1000 1000 ±30 8 24 150 910 8 15 150 -55~150 Unit V.

2SK2614 : 2SK2614 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV) 2SK2614 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.032 Ω (typ.) z High forward transfer admittance : |Yfs| = 13S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature rang.

2SK2615 : 2SK2615 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2615 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Drain power dissipation (Note 2) Channel temperature Storage temperature range .

2SK2616 : Ordering number:ENN5620B N-Channel Silicon MOSFET 2SK2616 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg. Package Dimensions unit:mm 2083B [2SK2616] 1.5 6.5 5.0 4 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SK2616] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 1 0.6 0.5 0.8 2 3 2.5 1.2 1.2 0 to 0.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraf.

2SK2617ALS : www.DataSheet4U.com Ordering number : ENA0361A 2SK2617ALS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2617ALS Features • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature SANYO’s ideal heat dissipation condition PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal.

2SK2617LS : Ordering number : ENN5443A Features • Low ON-resistance. • Low Qg. 2SK2617LS N-Channl Silicon MOSFET 2SK2617LS Ultrahigh-Speed Switching Applications Package Dimensions unit : mm 2078C [2SK2617LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1.2 2.4 14.0 0.75 0.7 Specifications Absolute Maximum Ratings at Ta=25°C 123 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Electrical Characteristics at Ta=25°C Tc=25˚C Conditions Ratings 500 ±30 4 16 2.0 25.

2SK2618ALS : www.DataSheet4U.com Ordering number : ENA0360A 2SK2618ALS SANYO Semiconductors DATA SHEET 2SK2618ALS Features • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature SANYO’s ideal heat dissipation condition PW.

2SK2618LS : Ordering number : EN8614 2SK2618LS 2SK2618LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching. • Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance St.