2SK357

2SK350 : ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃).

2SK350 : .

2SK3501 : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 95 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.32 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL .

2SK3501-01 : 2SK3501-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Applications www.DataSheet4U.com Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 600 A ID ±10 A ID(puls] ±40 V VGS ±30 A IAR *2 10 mJ EAS *1 217 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 2.02 W Tc=25°C 95 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=3.99mH, Vcc=60V *2 Tch = BVDSS, Tch = 150°C = -.

2SK3502-01MR : 2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 600 V Continuous drain current ID ±10 A Pulsed drain current ID(puls] ±40 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 10 A Maximum Avalanche Energy EAS *1 217 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV.

2SK3503 : SMD Type MOSFET N-Channel MOSFET 2SK3503 SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 0.36±0.1 ■ Features ● VDS (V) = 16V ● ID = 100 mA (VGS = 1.5V) ● RDS(ON) ＜ 50Ω (VGS = 1.5V) ● RDS(ON) ＜ 15Ω (VGS = 2.5V) ● RDS(ON) ＜ 12Ω (VGS = 4V) Gate 21 +0.151.6 -0.15 Drain Body Diode 3 0.5 +0.1 -0.1 0.3±0.05 ■ Absolute Maximum Ratings Ta = 25℃ Source +0.050.75 -0.05 +0.10.8 -0.1 1. Gate 2. Source 3. Drain Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tc=25℃ Pulsed Drain Current (Note.1) Power Dissipation Tc=25℃ Junction Temperature Storage Temperature Range Note.1: PW ≤ 10 μs, Duty Cycle ≤ 1% ■ El.

2SK3503 : The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven www.DataSheet4U.com by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 FEATURES • Automatic mounting supported • Gate can be driven by a 1.5 V power source • Because of its high input impedance, there’s no need to consider a drive current • Since bias resistance can be omitted, the number of components required can be reduced 1.6 ± 0.1 0.8 ± 0.1 3 0 to 0.1 2 0.2 +0.1 –0 0.5 0.5 0.6 0.75 ± 0.05 1 1.0 1.6 ± 0.1 ORDERING INF.

2SK3504-01 : 2SK3504-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Applications www.DataSheet4U.com Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 500 ±16 ±64 ±30 16 212.2 20 5 2.02 225 +150 Operating and storage -55 to +150 temperature range *1 L=1.52mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch =150°C *3 IF = BVDSS, Tch = 150°C *4 VDS = 500V = -ID, -di/dt=50A/µs, Vcc Item Drain-source voltage Co.

2SK3505 : Isc N-Channel MOSFET Transistor 2SK3505 ·FEATURES ·With To-220F packaging ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 14 IDM Drain Current-Single Pulsed 56 PD Total Dissipation @TC=25℃ 60 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case therm.

2SK3505-01MR : 2SK3505-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 500 V Continuous drain current ID ±14 A Pulsed drain current ID(puls] ±56 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 14 A Maximum Avalanche Energy EAS *1 242 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV.

2SK3506 : 2SK3506 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3506 Relay Drive and DC-DC Converter Applications Motor Drive Applications • • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Unit: mm • Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) www.DataSheet4U.com • Enhancement model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 45 135 100 220 45 10 150 −55 to150 Unit V V V A W mJ A mJ.

2SK3507 : The 2SK3507 is N-channel MOS FET device that features www.DataSheet4U.com a low on-state resistance and excellent switching characteristics, ORDERING INFORMATION PART NUMBER 2SK3507-ZK PACKAGE TO-252 (MP-3ZK) designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low gate charge QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A) • Built-in G-S protection diode • Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Dra.

2SK3508-01MR : 2SK3508-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS ID .

2SK351 : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pluse 10 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PA.

2SK351 : OEM: Hitachi MOSFET Transistor 2SK351 / K351 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability OEM: Hitachi MOSFET Transistor 2SK351 / K351 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability OEM: Hitachi MOSFET Transistor 2SK351 / K351 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability .

2SK3510 : The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3510 TO-220AB FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) • Low Ciss: Ciss = 8500 pF TYP. • Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z TO-263 TO-220SMDNote Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 75 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±83 ±332 A A Total Power Dissipatio.

2SK3511 : SMD Type MOSFET MOS Field Effect Transistor 2SK3511 TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on) = 12.5 m MAX. (VGS = 10 V, ID = 42 A) +0.2 8.7-0.2 Low Ciss: Ciss = 5900 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 75 20 83 260 100 1.5 150 -55 to +150 Unit V V A.