SUM60F

SUM60030E : www.vishay.com SUM60030E Vishay Siliconix N-Channel 80 V (D-S) MOSFET TO-263 Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration 80 0.0032 0.0034 94 120 d Single FEATURES • TrenchFET® power MOSFET • Maximum 175 °C junction temperature • Very low Qgd reduces power loss from passing through Vplateau • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Power supply - Secondary synchronous rectification • DC/DC converter • Power tools • Motor drive switch • DC/AC inverter • Battery management • OR-ing / e-fuse D G S N-Chan.

SUM60061EL : www.vishay.com SUM60061EL Vishay Siliconix P-Channel 80 V (D-S) MOSFET TO-263 Top View S D G PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = -10 V RDS(on) max. (Ω) at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration -80 0.0061 0.0086 145 -150 Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • Maximum 175 ºC junction temperature • Low RDS(on) minimizes power loss from conduction • Compatible with logic-level gate driving • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Battery protection • Motor drive control • Load switch S G P-Channel MOSFET D ORDERING INFORMATION .

SUM60FSMS : www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SUM60F thru SUM90F and SUM60FSMS thru SUM90FSMS Designer’s Data Sheet Part Number/Ordering Information 1/ SUM __ __ __ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level │ └ Package Type __ = Axial Leaded SMS = Surface Mount Square Tab 500 mA 6,000 thru 9,000 VOLTS 180 ns FAST RECOVERY RECTIFIER FEATURES: PIV to 9,000 Volts Hermetically Sealed Axial and Square Tab Surface Mount Package Fast Recovery 180 nsec Maximum 4/ Void Free Construction Metallurgically Bonded 175°C.

SUM60N02-3M9P : SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 20 rDS(on) (Ω) 0.0039 at VGS = 10 V 0.0052 at VGS = 4.5 V ID (A)a 60 60 FEATURES • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • OR-ing D TO-263 G DRAIN connected to TAB G D S S N-Channel MOSFET Top View Ordering Information: SUM60N02-3m9P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Ope.

SUM60N04-05LT : www.DataSheet4U.com SUM60N04-05LT Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) 40 FEATURES ID (A) 60a 20a rDS(on) (W) 0.0045 @ VGS = 10 V 0.0065 @ VGS = 4.5 V D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D D2PAK-5L D Automotive D Industrial T1 G 1 2 3 4 5 T2 D1 D2 S G D T1 S T2 N-Channel MOSFET Ordering Information: SUM60N04-05LT ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d A.

SUM60N04-06T : www.DataSheet4U.com SUM60N04-06T New Product Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) 0.0055 @ VGS = 10 V ID (A) 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D D2PAK-5L D Automotive D Industrial T1 G T2 1 2 3 4 5 D1 D2 S N-Channel MOSFET G D T1 S T2 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb Maxi.

SUM60N04-12LT : The SUM60N04-12LT is a 40-V n-channel, 15-mW logic level MOSFET in a 5-lead D2PAK package built on the Vishay Siliconix proprietary high-cell density TrenchFET technology. Two anti-parallel electrically isolated poly-silicon diodes are used to sense the temperature changes in the MOSFET. The gate of the MOSFET is protected from high voltage transients by two back-to-back poly-silicon zener diodes. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION D2Pak TO-263, 5 Leads D T1 G 1 2 3 4 5 D1 T2 D2 S G T1 D T2 S Document Number: 71620 S-03830—Rev. A, 28-May-01 N-Channel MOSFET www.vishay.com 1 www.DataSheet4U.com SUM60N04-12LT Vishay Siliconix New Product ABSOLUTE MAXIMUM RATINGS (TA = 25_C.

SUM60N06-15 : www.DataSheet4U.com SUM60N06-15 Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FEATURES rDS(on) (W) ID (A) 60 a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.015 @ VGS = 10 V APPLICATIONS D Automotive Applications Such As: − ABS − EPS − Motor Drives D Industrial D TO-263 G G D S S Top View Ordering Information: SUM60N06-15 SUM60N06-15-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Sto.

SUM60N08-07C : SUM60N08-07C Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS www.DataSheet4U.net 75 (V) rDS(on) (W) 0.007 @ VGS = 10 V ID (A) 60a D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package APPLICATIONS D Automotive D Industrial D2PAK-5 D (Tab, 3) (1) G 1 2 3 4 5 SENSE S (5) G KELVIN D S SENSE N-Channel MOSFET (4) (2) KELVIN ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C TA = 25_C Conduction.

SUM60N08-07T : www.DataSheet4U.com SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) 0.007 @ VGS = 10 V ID (A) 60a D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package APPLICATIONS D Automotive D Industrial D D2PAK-5L T1 G T2 1 2 3 4 5 D1 D2 S N-Channel MOSFET G D T1 S T2 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationa Operating.

SUM60N10-17 : The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is.

SUM60P05-11LT : www.DataSheet4U.com SUM60P05-11LT Vishay Siliconix P-Channel 55-V (D-S) MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) –55 FEATURES ID (A) –60a –60a rDS(on) (W) 0.011 @ VGS = –10 V 0.0175 @ VGS = –4.5 V D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS S D Automotive D Industrial D2PAK-5L T1 G D1 T2 D2 1 2 3 4 5 D G D T1 S T2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Aval.

SUM60UF : www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SUM60UF thru SUM90UF and SUM60UFSMS thru SUM90UFSMS Designer’s Data Sheet Part Number/Ordering Information SUM __ __ __ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level │ └ Package Type __ = Axial Leaded SMS = Surface Mount Square Tab 1/ 400 mA 6,000 thru 9,000 VOLTS 60 ns ULTRA FAST RECOVERY RECTIFIER • • • • • • • FEATURES: PIV to 9,000 Volts Hermetically Sealed Axial and Square Tab Surface Mount Package Ultra Fast Recovery 60 nsec Maximum 4/ Void Free Constructio.

SUM60UFSMS : www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SUM60UF thru SUM90UF and SUM60UFSMS thru SUM90UFSMS Designer’s Data Sheet Part Number/Ordering Information SUM __ __ __ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ S = S Level │ └ Package Type __ = Axial Leaded SMS = Surface Mount Square Tab 1/ 400 mA 6,000 thru 9,000 VOLTS 60 ns ULTRA FAST RECOVERY RECTIFIER • • • • • • • FEATURES: PIV to 9,000 Volts Hermetically Sealed Axial and Square Tab Surface Mount Package Ultra Fast Recovery 60 nsec Maximum 4/ Void Free Constructio.