Part Number
|
TF410 |
Manufacturer
|
Sanyo |
Description
|
N-Channel Silicon Junction FET |
Published
|
May 27, 2016 |
Detailed Description
|
Ordering number : ENA2007
TF410
SANYO Semiconductors
DATA SHEET
TF410
N-Channel Silicon Junction FET
Impedance Conve...
|
Datasheet
|
TF410
|
Overview
Ordering number : ENA2007
TF410
SANYO Semiconductors
DATA SHEET
TF410
N-Channel Silicon Junction FET
Impedance Converter, Infrared Sensor Applications
Applications
• Impedance conversion, infrared sensor applications
Features
• Ultrasmall package facilities miniaturization in end products : 1.
0mm×0.
6mm×0.
27mm (max 0.
3mm) • Small IGSS : max --500pA (VGSS= --20V, VDS=0V) • Small Ciss : typ.
0.
7pF (VDS= 10V, VGS=0V, f=1MHz) • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSS VGDS IG ID PD Tj
Tstg
Co...
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