DatasheetsPDF.com

TF410

Part Number TF410
Manufacturer Sanyo
Description N-Channel Silicon Junction FET
Published May 27, 2016
Detailed Description Ordering number : ENA2007 TF410 SANYO Semiconductors DATA SHEET TF410 N-Channel Silicon Junction FET Impedance Conve...
Datasheet TF410




Overview
Ordering number : ENA2007 TF410 SANYO Semiconductors DATA SHEET TF410 N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications Applications • Impedance conversion, infrared sensor applications Features • Ultrasmall package facilities miniaturization in end products : 1.
0mm×0.
6mm×0.
27mm (max 0.
3mm) • Small IGSS : max --500pA (VGSS= --20V, VDS=0V) • Small Ciss : typ.
0.
7pF (VDS= 10V, VGS=0V, f=1MHz) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg Co...






Similar Datasheet



Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)