DatasheetsPDF.com

TF414

ON Semiconductor
Part Number TF414
Manufacturer ON Semiconductor
Description N-Channel JFET
Published May 27, 2016
Detailed Description Ordering number : ENA2259B TF414 N-Channel JFET 40V, 50 to 130A, 0.11mS, SOT-883 http://onsemi.com Features  Small I...
Datasheet PDF File TF414 PDF File

TF414
TF414

Overview
Ordering number : ENA2259B TF414 N-Channel JFET 40V, 50 to 130A, 0.
11mS, SOT-883 http://onsemi.
com Features  Small IGSS : max 500pA (VGS= 20V, VDS=0V)  Small Ciss : typ 0.
7pF (VDS=10V, VGS=0V, f=1MHz)  Ultrasmall package facilitates miniaturization in end products  Halogen free compliance Applications  Impedance conversion, infrared sensor applications Electrical Connection 3 1 : Source 2 : Drain 3 : Gate 1 2 Top view Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Drain to Source Voltage VDSS 40 Gate to Drain Voltage VGDS 40 Gate Current IG 10 Drain Current ID 1 Power Dissipation PD 100 Junction Temperature Tj 150 Storage Temperature Tstg 55 to +150 This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model Unit V V mA mA mW C C Marking 31 2 SOT-883 A4 M M = Date Code Ordering & Package Information Device TF414T5G Pb-free and Halogen Free Package SOT-883 Shipping 8,000 pcs.
/ reel Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta  25C Parameter Gate to Drain Breakdown Voltage Gate to Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol Conditions V(BR)GDS IGSS VGS(off) IDSS | yfs | Ciss Crss IG = 10μA, VDS=0V VGS = 20V, VDS=0V VDS = 10V, ID = 1μA VDS = 10V, VGS = 0V VDS = 10V, VGS=0V, f = 1kHz VDS = 10V, VGS = 0V, f = 1MHz min 40 Value typ 1.
4 50 0.
05 0.
11 0.
7 0.
3 max 500 4.
0 130 Unit V pA V A mS pF pF Semiconductor Components Industries, LLC, 2014 January, 2014 12814HK TC-00003085/D1813HK/D1113HK GB No.
A2259-1/3 Drain Current, ID -- μA Drain Current, ID -- μA ID -- VDS 120 TF414...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)