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TF410

ON Semiconductor
Part Number TF410
Manufacturer ON Semiconductor
Description N-Channel JFET
Published Jan 25, 2016
Detailed Description Ordering number : ENA2007A TF410 N-Channel JFET 40V, 50 to 130μA, 0.11mS, USFP http://onsemi.com Applications • Imped...
Datasheet PDF File TF410 PDF File

TF410
TF410


Overview
Ordering number : ENA2007A TF410 N-Channel JFET 40V, 50 to 130μA, 0.
11mS, USFP http://onsemi.
com Applications • Impedance conversion, infrared sensor applications Features • Ultrasmall package facilities miniaturization in end products : 1.
0mm×0.
6mm×0.
27mm (max 0.
3mm) • Small IGSS : max --500pA (VGSS= --20V, VDS=0V) • Small Ciss : typ.
0.
7pF (VDS= 10V, VGS=0V, f=1MHz) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSS VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 40 --40 10 1 30 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
LOT No.
LOT No.
Package Dimensions unit : mm (typ) 7055-003 0.
6 0.
2 3 TF410-TL-H 0.
11 0 to 0.
02 0.
8 0.
1 1.
0 0.
1 1 0.
175 2 0.
15 0.
27 0.
05 1 2 1 : Source 2 : Drain 3 : Gate 3 USFP 0.
05 Product & Package Information • Package : USFP • JEITA, JEDEC :- • Minimum Packing Quantity : 10,000 pcs.
/reel Packing Type: TL Marking 3 BTL Electrical Connection 3 1 : Source 2 : Drain 3 : Gate 1 2 Top view 12 Semiconductor Components Industries, LLC, 2013 August, 2013 53012 TKIM/22912GB TKIM TC-00002703 No.
A2007-1/6 TF410 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance V(BR)GDS IGSS VGS(off) IDSS | yfs | Ciss Crss IG=--10μA, VDS=0V VGS=--20V, VDS=0V VDS=10V, ID=1μA VDS=10V, VGS=0V VDS=10V, VGS=0V, f=1kHz VDS=10V, VGS=0V, f=1MHz Ordering Information Device TF410-TL-H Package USFP...


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