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TF412S

ON Semiconductor
Part Number TF412S
Manufacturer ON Semiconductor
Description N-Channel JFET
Published Feb 9, 2016
Detailed Description Ordering number : ENA2300A TF412S N-Channel JFET 30V, 1.2 to 3.0mA, 5.0mS, SOT-883 http://onsemi.com Features  Small ...
Datasheet PDF File TF412S PDF File

TF412S
TF412S

Overview
Ordering number : ENA2300A TF412S N-Channel JFET 30V, 1.
2 to 3.
0mA, 5.
0mS, SOT-883 http://onsemi.
com Features  Small IGSS : max 1.
0nA (VGS= 20V, VDS=0V)  Small Ciss : typ 4pF (VDS=10V, VGS=0V, f=1MHz)  Ultrasmall package facilitates miniaturization in end products  Halogen free compliance Applications  Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications Electrical Connection 3 1 : Source 2 : Drain 3 : Gate 1 2 Top view Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Power Dissipation Junction Temperature Symbol VDSX VGDS IG ID PD Tj Value 30 30 10 10 100 150 Storage Temperature Tstg 55 to +150 This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model Unit V V mA mA mW C C Marking 31 2 SOT-883 A2 M M = Date Code Ordering & Package Information Device TF412ST5G Pb-free and Halogen Free Package SOT-883 Shipping 8,000 pcs.
/ reel Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Electrical Characteristics at Ta  25C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol Conditions V(BR)GDS IGSS VGS(off) IDSS | yfs | Ciss Crss IG = 10μA, VDS=0V VGS = 20V, VDS=0V VDS = 10V, ID = 1μA VDS = 10V, VGS = 0V VDS = 10V, VGS=0V, f = 1kHz VDS = 10V, VGS = 0V, f = 1MHz min 30 Value typ 0.
18 1.
2 3.
0 0.
80 5.
0 4 1.
1 max 1.
0 1.
5 3.
0 Unit V nA V mA mS pF pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated unde...


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