TOSHIBA
Transistor Silicon-Germanium
NPN Epitaxial Planar Type
MT3S111P
MT3S111P
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
• Low-Noise Figure: NF=0.
95 dB (typ.
) (@f=1 GHz) • High Gain: |S21e|2=10.
5 dB (typ.
) (@f=1 GHz)
Unit: mm
Marking
R5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
PW-Mini
JEDEC
⎯
JEITA
SC-62
TOSHIBA
2-5K1A
Weight:0.
05 g (typ.
)
Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range
VCES
13
V
VCEO
6
V
VEBO
0.
6
V
IC
100
mA
IB
10
mA
PC
300
m...