isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC5890
DESCRIPTION ·High Gain Bandwidth Product
fT = 7.
8 GHz TYP.
·High power gain and low noise figure ;
PG = 12 dB TYP.
, NF = 1.
0 dB typ.
@ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in UHF ~ VHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
12
V
VEBO
Emitter-Base Voltage
1.
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
75
mA
0.
7
W
150
℃
Tstg
Storage ...