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2SC5800

Renesas
Part Number 2SC5800
Manufacturer Renesas
Description NPN SILICON RF TRANSISTOR
Published Jun 27, 2016
Detailed Description DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN...
Datasheet PDF File 2SC5800 PDF File

2SC5800
2SC5800

Overview
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number 2SC5800 2SC5800-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC P Note tot Tj Tstg Ratings 9.
0 5.
5 1.
5 100 200 150 −65 to +150 Note Mounted on 1.
08 cm2 × 1.
0 mm (t) glass epoxy PCB Unit V V V mA mW °C °C Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
P15660EJ1V0DS00 (1st edition) Date Published July 2001 NS CP(K) Printed in Japan © 2001 2SC5800 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product (1) Gain Bandwidth Product (2) Insertion Power Gain (1) Insertion Power Gain (2) Noise Figure Reverse Transfer Capacitance Symbol Test Conditions ICBO VCB = 5 V, IE = 0 mA IEBO VBE = 1 V, IC = 0 mA h Note 1 FE VCE = 1 V, IC = 5 mA fT VCE = 1 V, IC = 5 mA, f = 2 GHz fT VCE = 1 V, IC = 15 mA, f = 2 GHz S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz S...


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