INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
9N50
·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
500 ±20
9
V V A
ID(puls)
Pulse Drain Current
36 A
Ptot Total Dissipation@TC=25℃
44 W
Tj Max.
Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.
67 ℃/W
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