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9N40

Unisonic Technologies
Part Number 9N40
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 19, 2016
Detailed Description 9N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 9A, 400V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 9...
Datasheet PDF File 9N40 PDF File

9N40
9N40


Overview
9N40 UNISONIC TECHNOLOGIES CO.
, LTD Preliminary 9A, 400V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 9N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology.
This technology specializes in allowing a minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 9N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.
 FEATURES * High switching speed * RDS(ON) < 0.
75Ω @ VGS=10V, ID=4.
5A * 100% avalanche tested  SYMBOL 1 TO-220 1 TO-220F1  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N40L-TA3-T 9N40G-TA3-T 9N40L-TF1-T 9N40G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R502-552.
d 9N40 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage Drain Current Continuous (TC=25°C) Pulsed (Note 2) Avalanche Current (Note 2) VGSS ID IDM IAR ±30 9 36 9 V A A A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 427 mJ 4.
0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns Power Dissipation Derate above 25°C TO-220 TO-220F1 TO-220 TO-220F1 PD 113 W 40 W 0.
9 W/°C 0.
32 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
L = 10.
5mH, IAS = 9A, VDD = 90V, RG = 25Ω,...


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