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9N50

UTC
Part Number 9N50
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Jul 10, 2016
Detailed Description 9N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary 9A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N50 is an N-ch...
Datasheet PDF File 9N50 PDF File

9N50
9N50

Overview
9N50 UNISONIC TECHNOLOGIES CO.
, LTD Preliminary 9A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers planar stripe and DMOS technology.
This technology allows a minimum on-state resistance, superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 9N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
„ FEATURES * RDS(ON)=0.
85Ω @ VGS=10V * High Switching Speed * Improved dv/dt Capability * 100% Avalanche Tested „ SYMBOL 2.
Drain Power MOSFET 1.
Gate 3.
Source „ ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N50L-TF3-T 9N50G-TF3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube www.
unisonic.
com.
tw Copyright © 2011 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-522.
b 9N50 Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 500 V ±30 V Drain Current Continuous (TC=25°C) Pulsed (Note 2) Avalanche Current (Note 2) ID IDM IAR 9 (Note 5) 36 (Note 5) 9 A A A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 4) Peak Diode Recovery dv/dt (Note 4) EAS EAR dv/dt 360 mJ 13.
5 mJ 4.
5 V/ns Power Dissipation Derate above 25°C PD 44 W 0.
35 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature 3.
L = 8mH, IAS = 9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4.
ISD ≤ 9A, di/dt ≤ 200A/µs, VDD ≤ BVDSS,...


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