INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF640A
FEATURES ·Low RDS(on) = 0.
144Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
200 ±30
V V
ID Drain Current-Continuous
18 A
IDM Drain Current-Single Pluse
72 A
PD Total Dissipation @TC=25℃
139 W
TJ
Max.
Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website：www.
iscsemi.
cn
...