CEP6031L/CEB6031L
March 1998
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
4 FEATURES
30V , 60A , RDS(ON)=10m Ω @VGS=10V.
RDS(ON)=15m Ω @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
D
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @TJ=125 C -Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation @Tc=25 C Derate above 25 C
Operating and Storage Temperature Range
Symbol VDS VGS ID IDM IS
PD
TJ, TSTG
Limit
30 Ć16
60 180 60...