isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.
) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Intended in fast switching applications for high output powers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
PT
Total Power Dissipation @ TC≤25℃
TJ
Junction Temperature
10
A
175
W
200
℃
Tstg
Storage Temperature Range
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