NPT2010
Gallium Nitride 48V, 100W, DC-2.
2 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and saturated applications Tunable from DC-2.
2 GHz 48V Operation Industry Standard Package High Drain Efficiency (60%)
Applications
Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM Applications VHF/UHF/L-Band Radar
DC-2.
2 GHz 100W
GaN HEMT
Product Description
The NPT2010 GaN HEMT is a wideband
transistor optimized for DC-2.
2 GHz operation.
This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic ...