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NPT2018

Nitronex
Part Number NPT2018
Manufacturer Nitronex
Description GaN HEMT
Published Sep 18, 2016
Detailed Description NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on...
Datasheet PDF File NPT2018 PDF File

NPT2018
NPT2018

Overview
NPT2018 Preliminary Gallium Nitride 48V, 12.
5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-6 GHz  48V Operation  Industry Standard Plastic Package  High Drain Efficiency (>60%) Applications  Defense Communications  Land Mobile Radio  Avionics  Wireless Infrastructure  ISM Applications  VHF/UHF/L/S-Band Radar DC-6 GHz 12.
5W GaN HEMT Product Description The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.
This device has been designed for CW, pulsed, and linear operation with output power levels to 12.
5W (41 dBm) in an industry standard surface mount plastic package.
RF Specifications (CW, 2.
5 GHz): VDS = 48V, IDQ = 75mA, TC= 25°C Symbol Parameter Min GSS Small-signal Gain - PSAT Saturated Output Power - SAT Efficiency at Saturated Output Power GP Gain at POUT = 12.
5W  Drain Efficiency at POUT = 12.
5W - VDS Drain...


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