DatasheetsPDF.com

NPT2019

Nitronex
Part Number NPT2019
Manufacturer Nitronex
Description GaN HEMT
Published Sep 18, 2016
Detailed Description NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-S...
Datasheet PDF File NPT2019 PDF File

NPT2019
NPT2019

Overview
NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and pulsed applications  Tunable from DC-6 GHz  48V Operation  Industry Standard Plastic Package  High Drain Efficiency (>60%) Applications  Defense Communications  Land Mobile Radio  Avionics  Wireless Infrastructure  ISM Applications  VHF/UHF/L/S-Band Radar DC-6 GHz 25W GaN HEMT Product Description The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.
This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry standard surface mount plastic package.
RF Specifications (Pulsed*, 2.
5 GHz): VDS = 48V, IDQ = 150mA, TC= 25°C Symbol Parameter Min Typ Max Units GSS Small-signal Gain - 16.
2 - dB PSAT Saturated Output Power - 44.
8 - dBm SAT Efficiency at Saturated Output Power GP Gain at POUT = 25W*  Drain ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)