DatasheetsPDF.com

NPT2010

Nitronex
Part Number NPT2010
Manufacturer Nitronex
Description GaN HEMT
Published Sep 18, 2016
Detailed Description NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon tech...
Datasheet PDF File NPT2010 PDF File

NPT2010
NPT2010

Overview
NPT2010 Gallium Nitride 48V, 100W, DC-2.
2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-2.
2 GHz  48V Operation  Industry Standard Package  High Drain Efficiency (>60%) Applications  Defense Communications  Land Mobile Radio  Avionics  Wireless Infrastructure  ISM Applications  VHF/UHF/L-Band Radar DC-2.
2 GHz 100W GaN HEMT Product Description The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.
2 GHz operation.
This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange.
RF Specifications (CW, 2.
15 GHz): VDS = 48V, IDQ = 600mA, TC= 25°C Symbol Parameter Min GSS Small-signal Gain - PSAT Saturated Output Power - SAT Efficiency at Saturated Output Power GP Gain at POUT = 95W  Drain Efficiency at POUT = 95W 13.
5 52.
5 VDS Drain Voltage -  Ruggedness: Output Mismatch, all phase angles Typ Max 17 - Units dB 50.
5 - dBm 64 - % 15 - dB 61 - % 48 - V VSWR = 10:1, No Device Damage Page 1 NDS-034 Rev.
1, 052413 NPT2010 DC Specifications: TC = 25°C Symbol Parameter Off Characteristics IDLK Drain-Source Leakage Current (VGS=-8V, VDS=160V) IGLK Gate-Source Leakage Current (VGS=-8V, VDS=0V) On Characteristics VT VGSQ RON ID, MAX Gate Threshold Voltage (VDS=48V, ID=24mA) Gate Quiescent Voltage (VDS=48V, ID=600mA) On Resistance (VDS=2V, ID=180mA) Maximum Drain Current (VDS=7V pulsed, 300µS pulse width, 0.
2% Duty Cycle) Min Typ Max Units - - 24 mA - - 12 mA -2.
5 -1.
5 -0.
5 V -2.
1 -1.
2 -0.
3 V - 0.
2 -  - 14 - A Thermal Resistance Specification: Symbol Parameter Typ Units RJC Thermal Resistance (Junction-to-Case), TJ = 200 °C 1.
75 °C/W Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in heatsink.
Absolute Maximum Ratings: Not s...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)