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NPT2019

Part Number NPT2019
Manufacturer Nitronex
Description GaN HEMT
Published Sep 18, 2016
Detailed Description NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-S...
Datasheet NPT2019




Overview
NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and pulsed applications  Tunable from DC-6 GHz  48V Operation  Industry Standard Plastic Package  High Drain Efficiency (60%) Applications  Defense Communications  Land Mobile Radio  Avionics  Wireless Infrastructure  ISM Applications  VHF/UHF/L/S-Band Radar DC-6 GHz 25W GaN HEMT Product Description The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation.
This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry stand...






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