NPT2019
Preliminary
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and pulsed applications Tunable from DC-6 GHz 48V Operation Industry Standard Plastic Package High Drain Efficiency (60%)
Applications
Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM Applications VHF/UHF/L/S-Band Radar
DC-6 GHz 25W
GaN HEMT
Product Description
The NPT2019 GaN HEMT is a wideband
transistor optimized for DC-6 GHz operation.
This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry stand...