MJD112 MJD117
Complementary power Darlington
transistors
Features
■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
.
TAB 3
1
TO-252 (DPAK)
Figure 1.
Internal schematic diagram
R1 typ.
= 15 kΩ
R2 typ.
= 100 Ω
Table 1.
Device summary
Order codes
Marking
MJD112T4
MJD112
MJD117T4
MJD117
January 2010
Polarity
NPN PNP
Doc ID 3540 Rev 3
Package DPAK DPAK
Packaging Tape and reel Tape and reel
1/10
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