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MJD112

Part Number	MJD112
Manufacturer	JCET
Description	NPN Transistor
Published	Dec 11, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD112 TRANSISTOR (NPN) ...
Datasheet	MJD112 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-251-3L Plastic-Encapsulate Transistors MJD112 TRANSISTOR (NPN) yFEATURES Complementary Darlington Power Transistors Dpak for Surface Mount Applications TO-251-3L 1.
BASE 2.
COLLECTOR 3.
EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 2A PC Collector Power Dissipation 1W RθJC Thermal resistance, junction to case 6.
25 ℃/W RθJA Thermal resistance, junction to Ambient 71.
4 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector-emitter cut-off current Emitter cut-off current D...

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