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MJD112

Part Number	MJD112
Manufacturer	Fairchild Semiconductor
Description	NPN Silicon Darlington Transistor
Published	Nov 8, 2016
Detailed Description	MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor Features • High DC Current Gain • Bui...
Datasheet	MJD112 PDF File

Overview

MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) November 2006 tm Equivalent Circuit C B 1 D-PAK 1.
Base 2.
Collector 3.
Emitter R1 R2 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter R1 ≅ 10kΩ R2 ≅ 0.
6kΩ E Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ Junction Temperature TSTG Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
100 100 5 2 4 50 20 1.
75 150 - 65 ~ 150 Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition VCEO(sus) ICEO ICBO IEBO hFE Collector-E...

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