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MJD32C

Silicon PNP Power Transistor

Description

isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) ·Complement to Type MJD31C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use...

Inchange Semiconductor

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