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MJD3055

Inchange Semiconductor
Part Number MJD3055
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 6, 2016
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-...
Datasheet PDF File MJD3055 PDF File

MJD3055
MJD3055

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
1 V(Max)@ IC = 4A ·Complement to Type MJD2955 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current 6 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@Ta=25℃ 1.
75 Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 6.
25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.
4 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD3055 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.
4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.
3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB=0 ICBO Collector Cutoff Current VCB= 100V; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 4A ; VCE= 4V hFE-2 DC Current Gain IC= 10A ; VCE= 4V fT Current-Gain—Bandwidth Product Pulse Test: PW≤300μs, Duty Cycle≤2.
0% IC= 0.
5A ; VCE= 10V;ftest= 1.
0MHz MIN MAX UNIT 60 V 1.
1 V 8.
0 V 1.
8 V 50 uA 0.
02 mA 0.
5 mA 20 100 5 2.
0 MHz isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark isc Silicon NPN Power...


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