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MJD3055T4

STMicroelectronics
Part Number MJD3055T4
Manufacturer STMicroelectronics
Description Low voltage NPN power transistor
Published Jun 26, 2023
Detailed Description MJD3055T4 Datasheet Low voltage NPN power transistor TAB 23 1 DPAK C 2, TAB 1 B Features • Surface-mounting DPAK (TO-2...
Datasheet PDF File MJD3055T4 PDF File

MJD3055T4
MJD3055T4

Overview
MJD3055T4 Datasheet Low voltage NPN power transistor TAB 23 1 DPAK C 2, TAB 1 B Features • Surface-mounting DPAK (TO-252) power package in tape and reel • Electrically similar to MJE3055T Application • General purpose switching and amplifier Description The device is manufactured in planar technology with “base island” layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
E3 Product status link MJD3055T4 Product summary Order code MJD3055T4 Marking MJD3055 Package DPAK Packing Tape and reel DS13694 - Rev 1 - March 2021 For further information contact your local STMicroelectronics sales office.
www.
st.
com MJD3055T4 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VCBO Collector-base voltage (IE = 0 V) VCEO Collector-emitter voltage (IB = 0 A) VEBO Collector-base voltage (IC = 0 A) IC Collector current IB Base current PTOT Total power dissipation at Tc = 25°C Tstg Storage temperature range TJ Maximum operating junction temperature Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 70 V 60 V 5 V 10 A 6 A 20 W -65 to 150 °C 150 Value 6.
25 100 Unit °C/W °C/W DS13694 - Rev 1 page 2/10 MJD3055T4 Electrical characteristics 2 Electrical characteristics Tcase = 25°C unless otherwise specified.
Table 3.
Electrical characteristics Symbol Parameter Test conditions ICEX Collector cut-off current VCE = 70 V, VBE = -1.
5 V VCE = 70 V, TJ = 150°C, VBE = -1.
5 V (1) ICBO Collector cut-off current VCB = 70 V, IE = 0 A VCB = 70 V, TJ = 150°C, IE = 0 A (1) ICEO Collector cut-off current VCE = 30 V, IB = 0 A IEBO Emitter cut-off current VEB = 5 V IC = 0 A VCEO(sus) (2) Collector-emitter sustaining voltage IC = 30 mA IB = 0 A VCE(sat) (2) Collector-emitter saturation voltage IC = 4 A, IB = 0.
4 A IC = 10 A, IB = 3.
3 A VBE(...


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