MJD112
NPN Silicon Darlington
Transistor
MJD112
NPN Silicon Darlington
Transistor
Features
• High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix)
November 2006
tm
Equivalent Circuit C
B
1 D-PAK
1.
Base 2.
Collector 3.
Emitter
R1 R2
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
R1 ≅ 10kΩ R2 ≅ 0.
6kΩ
E
Value
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP Collector Current (Pulse)
IB Base Current
PC Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
* These ...