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MJD350

Part Number MJD350
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Nov 11, 2016
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·Low Coll...
Datasheet MJD350





Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.
0V(Max.
)@ IC= -50mA ·DPAK for Surface Mount Applications ·Complement to Type MJD340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous ICM Collector Current-P...






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