SMD Type
Transistors
NPN Epitaxial Planar Silicon
Transistor 2SC4027
Features
High voltage and large current capcity Adoption of MBIT process Fast switohing time
+9.
70 0.
2 -0.
2
TO-252
6.
50+0.
15 -0.
15
5.
30+0.
2 -0.
2
2.
30+0.
1 -0.
1
0.
50+0.
8 -0.
7
Unit: mm
+1.
50 0.
15 -0.
15
3.
80
+ 0 .
1 55 .
5 5 -0.
15
0.
80+0.
1 -0.
1
0.
127 max
2.
3 4.
60+0.
15
-0.
15
0.
60+0.
1 -0.
1
+00.
50 .
15 -0.
15
+01.
50 .
28 -0.
1
+02.
65 .
25 -0.
1
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Total Power dissipation Ta = 25
TC = 25 Junction temperature Storage temperature...