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2SC4003

Part Number	2SC4003
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 18, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tes...
Datasheet	2SC4003 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.
2 A PC Collector Power Dissipation 1.
0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4003 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 50mA; IB= 5mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0 V(BR)CEO Collect...

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