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2SC4001


Part Number 2SC4001
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution moni...
Features
·Collector
  –Emitter Sustaining Voltage- : VCBO = 300 V(Min)
·Complement to Type 2SA1546 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ...

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2SC400 : : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC400 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit in mm 053 MAX. FEATURES . High Transition Frequency : fx=30GMHz (Typ.) . Low Collector Output Capacitance : C ^=4pF (Typ .) . Low Saturation Voltage : V CE ( sat )=0.15V (Typ.) at I c=10mA, I B=lmA . High Switching Speed : t s tg=300ns (Typ.) 04.95 MAX. 1" ~ ri| l l r 00.4 5 r a in d aH' . Complementary to 2SA500. 02 2 \3 j MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage Emitter Base Voltage VCEO VEBO 20 V 5 V 1. EMITTER Collector Current Base.

2SC4001 : .

2SC4002 : Ordering number:EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2003B [2SC4002] 5.0 4.0 4.0 5.0 0.45 0.5 0.45 0.6 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg 1.3 1.3 Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff C.

2SC4002 : 2SC4002 Ordering number : ENN2960A 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE VCB=300V, IE=0 VEB=4V, IC=0 VCE.

2SC4002 : ST 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.18g Absolute Maximum Ratings (T a = 25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS G S P FORM A IS AVAILABLE Value 400 400 5 200 400 600 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: .

2SC4002 : 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25oC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.18g Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS Value 400 400 5 200 400 600 150 -55 to +150 Unit V V V mA mA mW OC OC Page 1 of 2.

2SC4003 : NPN Epitaxial Planar Silicon Transistor FEATURES  High hFE hFE=60 to 200.  Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 400 V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 0.2 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)014 Rev.A www.gmesemi.com 1 Production specification NPN Epitaxial Planar Silicon Transistor 2SC4003 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter S.

2SC4003 : Ordering number : ENN2959B 2SC4003 2SC4003 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=300V, IE=0 Emitter Cutoff Current IEBO VEB=4V, IC=0 DC Current.

2SC4003 : ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.2 A PC Collector Power Dissipation 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4003 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless.

2SC4003 : TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package. / Features ,, MBIT 。 High breakdown voltage, adoption of MBIT process excellent hFE linearity. / Applications 。 High voltage driver applications. / Equivalent Circuit / Pinning 12 3 4 PIN1:Base PIN 2,4:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range D 60~120 E 100~200 http://www.fsbrec.com 1/6 2SC4003 Rev.E May.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Collector Power Dissipation Collector Power Dissipa.

2SC4003 : Transys Electronics L I M I T E D www.DataSheet4U.com TO-251 Plastic-Encapsulated Transistors 2SC4003 TRANSISTOR (NPN) TO-251 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO.

2SC4003 : www.DataSheet4U.com SMD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4003 TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High breakdown voltage +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 Excellent hFE linearity 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO V.

2SC4003 : 2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 1 23 3. EMITTER Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature 400 400 5 0.2 1 150 -55-150 V V V A W ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10µA,.

2SC4004 : Power Transistors 2SC4004 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 / ■ Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+–00..12 Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 900 V c type Collector-emitter voltage (E-B short) V.

2SC4004 : ·With TO-220Fa package · Wide area of safe operation (ASO) ·High-speed switching ·High collector to base voltage VCBO APPLICATIONS ·For high breakdown voltage highspeed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC4004 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 1 2 0.3 30 w UNIT V V.

2SC4004 : ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.3 A 2 W 30 1.




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