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2SC4003

Part Number	2SC4003
Manufacturer	Sanyo Semicon Device
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	Ordering number : ENN2959B 2SC4003 2SC4003 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applicat...
Datasheet	2SC4003 PDF File

Overview

Ordering number : ENN2959B 2SC4003 2SC4003 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage.
• Adoption of MBIT process.
• Excellent hFE linearity.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=300V, IE=0 Emitter Cutoff Current IEBO VEB=4V, IC=0 DC Current Gain hFE VCE=10V, IC=50mA Gain-Bandwidth Product fT VCE=30V, IC=10mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO IC=10µA, IE=...

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