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2SC4003

Part Number	2SC4003
Manufacturer	GME
Description	NPN Epitaxial Planar Silicon Transistor
Published	May 10, 2018
Detailed Description	NPN Epitaxial Planar Silicon Transistor FEATURES  High hFE hFE=60 to 200.  Low VCE(sat)=0.6V. Pb Lead-free Producti...
Datasheet	2SC4003 PDF File

Overview

NPN Epitaxial Planar Silicon Transistor FEATURES  High hFE hFE=60 to 200.
 Low VCE(sat)=0.
6V.
Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 400 V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 0.
2 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)014 Rev.
A www.
gmesemi.
com 1 Production specification NPN Epitaxial Planar Silicon Transistor 2SC4003 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage VCBO VCEO VEBO IC=10uA,Ie=0 IC=1mA,IB=0 IE=10uA,IC=0 400 400 5 Collector cut-off current ICBO VCB=300V,IE=0 0.
1 UNIT V V V uA Emitter cut-off curren...

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