isc Silicon
NPN Power
Transistor
DESCRIPTION ·Large current capacitance ·High-speed switching ·High allowable power dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers,
inverter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6.
5
V
IC
Collector Current-Continuous
2.
5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
4
A
15 W
0.
8
150
℃
...