DatasheetsPDF.com

2SC6011

INCHANGE
Part Number 2SC6011
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6011 DESCRIPTION ·High Collector-Emitter Breakdown Voltage-...
Datasheet PDF File 2SC6011 PDF File

2SC6011
2SC6011

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6011 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Good Linearity of hFE ·Complement to Type 2SA2151 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 160 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6011 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.
0A; IB= 0.
5A ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.
0MHz fT Current-Gain—Bandwidth Product IE= -0.
5A; VCE= 12V MIN TYP.
MAX UNIT 200 V 0.
5 V 10 μA 10 μA 50 180 270 pF 20 MHz  hFE Classifications O P Y 50-100 70-140 90-180 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please c...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)