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2SC6000

Toshiba Semiconductor
Part Number 2SC6000
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Oct 15, 2013
Detailed Description 2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applica...
Datasheet PDF File 2SC6000 PDF File

2SC6000
2SC6000

Overview
2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications • • • High DC current gain: hFE = 250 to 400 (IC = 2.
5 A) Low collector-emitter saturation: VCE (sat) = 0.
18 V (max) High speed switching: tf = 13 ns (typ) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Tc = 25°C DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 120 120 50 6 7.
0 10.
0 0.
5 20 150 −55 to 150 Unit V V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-13 Free Datasheet http://www.
datasheet4u.
com/ 2SC6000 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = 120 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1 mA VCE = 2 V, IC = 2.
5 A IC = 2.
5 A, IB = 83 mA IC = 2.
5 A, IB = 83 mA See Figure 1 circuit diagram VCC ∼ − 20 V, RL = 8.
0 Ω IB1 = 83 mA, IB2 = −166 m...


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