DatasheetsPDF.com

2SC6011

Sanken
Part Number 2SC6011
Manufacturer Sanken
Description Audio Amplification Transistor
Published Oct 27, 2020
Detailed Description 2SC6011 Audio Amplification Transistor Features and Benefits ▪ Small package (TO-3P) ▪ High power handling capacity, 16...
Datasheet PDF File 2SC6011 PDF File

2SC6011
2SC6011


Overview
2SC6011 Audio Amplification Transistor Features and Benefits ▪ Small package (TO-3P) ▪ High power handling capacity, 160 W ▪ Improved sound output by reduced on-chip impedance ▪ For professional audio (PA) applications, VCEO = 200 V versions available ▪ Complementary to 2SA2151 ▪ Recommended output driver: 2SC4832 Package: 3-Lead TO-3P Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating.
The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit board design.
This series of transistors is very well suited to not only multichannel applications for AV (audio-visual) amplifiers and receivers, but also parallel connection applications for PA (professional audio system) amplifiers.
Applications include the following: ▪ Single transistors for audio amplifiers ▪ Home audio amplifiers ▪ Professional audio amplifiers ▪ Automobile audio amplifiers ▪ Audio market ▪ Single transistors for general purpose Not to scale 38102, Rev.
1 Equivalent Circuit E 3 B 1 2 C SANKEN ELECTRIC CO.
, LTD.
http://www.
sanken-ele.
co.
jp/en/ 2SC6011 Audio Amplification Transistor SELECTION GUIDE Part Number Type hFE Rating Range O: 50 to 100 Packing 2SC6011* NPN Range P: 70 tp 140 30 pieces per tube Range Y: 90 to 180 *Specify hFE range when ordering.
If no hFE range is specified, order will be fulfilled with either or both range O and range Y, depending upon availability.
ABSOLUTE MAXIMUM RATINGS at TA = 25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage VCBO 200 V VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 15 A Base Current IB 4 A Collector Power Dissipation PC 160 W Junction Temperature TJ 150 °C Storage Temperature Tstg –55 to150 °C ELECTRICAL CHARACTERISTICS at TA = 25°C Characteristic Symbol Test Condit...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)