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2SC6010

Toshiba
Part Number 2SC6010
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Oct 15, 2013
Detailed Description 2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Switching Regul...
Datasheet PDF File 2SC6010 PDF File

2SC6010
2SC6010

Overview
2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tf = 0.
24μs (max) (IC = 0.
3A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 600 285 8 1.
0 2.
0 0.
5 1.
0 150 −55 to 150 Unit V V V V A A W °C °C 1.
Base 2.
Collector 3.
Emitter JEDEC JEITA TOSHIBA Weight: ― ― 2-7D101A g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-13 Free Datasheet http://www.
datasheet4u.
com/ 2SC6010 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector emitter saturation voltage Base-emitter saturation voltage VCE (sat) VBE (sat) tr IB1 Test Condition VCB = 600 V, IE = 0 VEB = 8 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.
1 A VCE = 5 V, IC = 0.
2 A IC = 0.
6 A, IB = 75 mA IC = 0.
6 A, IB = 75 mA 20 μs VCC ≈ 200 V IB1 IB21 IC 667 Ω Min ― ― 600 285 80 100 60 ― ― Typ.
...


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