SEMICONDUCTOR TECHNICAL DATA INTERFACE AND SWITCHING APPLICATION.
FEATURES ESD Protected 2000V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current Continuous Pulsed (Note 1) ID IDP Drain Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note 1) Pulse Width 10 , Duty Cycle 1% RATING 60 20 500 2000 625 150 -55 150 UNIT V V mA mW L M C 2N7000K N Channel MOSFET ESD Protected 2000V BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.
70 MAX B 4.
80 MAX C 3.
70 M...

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