Part Number
|
P1006BT |
Manufacturer
|
UNIKC |
Description
|
N-Channel MOSFET |
Published
|
Feb 7, 2017 |
Detailed Description
|
P1006BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ @VGS = 10V
ID 61A
TO-220
ABSO...
|
Datasheet
|
P1006BT
|
Overview
P1006BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 10mΩ @VGS = 10V
ID 61A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
61 39 150
Avalanche Current
IAS 39
Avalanche Energy
L = 0.
1 mH
EAS
77
Power Dissipation
TC= 25 °C TC= 100°C
PD
83 33
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperat...
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