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P1006BT

NIKO-SEM
Part Number P1006BT
Manufacturer NIKO-SEM
Description N-Channel Transistor
Published Feb 1, 2017
Detailed Description NIKO-SEM N-Channel Enhancement Mode P1006BT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMAR...
Datasheet PDF File P1006BT PDF File

P1006BT
P1006BT

Overview
NIKO-SEM N-Channel Enhancement Mode P1006BT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ ID 61A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 ° C TC = 100 ° C L = 0.
1mH TC = 25 ° C TC = 100 ° C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RJA Junction-to-Case RJC 1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
TYPICAL 1: GATE 2: DRAIN 3: SOURCE LIMITS 60 ±20 61 39 150 39 77 83 33 -55 to 150 UNITS V V A mJ W °C MAXIMUM 62.
5 1.
5 UNITS °C /W .
ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATI...


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